The role of reflectivity change in optically induced recrystallization of thin silicon films

摘要

In this paper we study a simplified model of the fundamental mechanisms governing the radiatively induced recrystallization of a thin polysilicon layer on a heathyphen;sink structure. It has been observed that instabilities in laser induced crystal growth on thin polysilicon layers do occur. To study these solidification instabilities we use a linear stability analysis. The reflectivity difference between the liquid and the solid phases is shown to be a source of thermal instability.