Application of the Lifshitzhyphen;Slyozov theory to precipitation of phosphorus in siliconhyphen;germanium thermoelectric alloys

摘要

The applicability of the Lifshitzhyphen;Slyozov model for predicting phosphorus precipitation rates in the phosphorushyphen;SiGe system is investigated. Model parameters are determined from shorthyphen;term anneals of less than 2000 h for SiGe alloys varying in silicon content from 67 to 81 at.percnt; and prepared by zone leveling or hot pressing. Using these parameters in the model, resistivity changes are predicted for phosphorushyphen;doped SiGe thermoelectric elements which had been life tested from 4000 to 40 000 h. It is concluded that the Lifshitzhyphen;Slyozov model is applicable to the phosphorushyphen;SiGe system. The results of this study can be used to calculate longhyphen;term degradation of thermoelectric performance in SiGe alloys due to phosphorus precipitation.