Diffusion effects in onehyphen;carrier spacehyphen;chargehyphen;limited currents with trapping

摘要

The onehyphen;carrier injection currenthyphen;voltage characteristics for insulators having two equal metal contacts and containing traps are computed, together with the freehyphen;carrier zerohyphen;bias spatial distributions, for extrinsic semiconductors. It is shown that the overlap of the contacts may give rise to traphyphen;filledhyphen;limit characteristics governed by a power law. The steepness of these characteristics proves to be less than that predicted by Lampert and Edelman. The shallowhyphen;trap squarehyphen;law characteristic may be entirely replaced by an overlaphyphen;determined Ohm's law characteristic. The overlap sometimes fails to be removed through impurity conduction.