Solid‐phase epitaxial growth of Si through palladium silicide layers

摘要

Epitaxial growth of 4000‐ to 9000‐A˚‐thick Si layers has been obtained by solid‐phase transport through Pd silicide layers. The structures were formed by evaporating Si on Pd deposited on ⟨100⟩ Si substrates. The transport and growth of Si were stuided by SEM and MeV4He+backscattering and channeling effect measurements. The structures were initially heated to 280 °C to form Pd2Si and subsequently heated to temperatures between 500 and 600 °C to obtain transport of Si. At 500 °C the transport rate of Si through the silicide layer is about 15 A˚/min. Pd inclusions are found in the grown Si layer. The amount of Pd can be reduced by use of slow hearing between 280 °C and the transport temperature. Channeling measurements showed that the Si layers are well ordered and epitaxial with the underlying ⟨100⟩ substrate.