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Sputter synthesis of modulated multilayer high‐energy‐product permanent magnet films

机译:调制多层高连字符;产品永磁膜的溅射合成

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摘要

Multilayered permanent magnet films with alternating layers differing vastly in anisotropy field and intrinsic coercivity have been sputter synthesized from Sm‐Co‐based TDK‐type 2‐17 bulk targets. The basic layer thickness range for which modulated properties can be observed has been investigated from <0.1 to ≳10 mgr;m. The individual layers have been synthesized so as to exhibit high‐static‐energy product values of ≊15 MGOe. The alternating layers exhibited coercivities around 5 and 15 kOe, respectively, so that for applied reversed fields in the vicinity of 10 kOe the alternating layers have their in‐plane magnetizations pointing in opposite directions, reducing the net magnetization to near zero. The magnetic property modulation was accomplished through modulation of the Sm content through sputter process control and the method of crystallization of the alternating layers, without changing either the sputtering targets or substrate positions. For such modulated layer films, the system magnetic energy density in the absence of external fields is a function of the reversed‐field value applied after initial in plane saturation.
机译:从基于Sm‐Co‐的TDK‐type 2‐17个块状靶材中合成了具有各向异性场和固有矫顽力差异很大的交替层的多层永磁薄膜。研究了可以观察到调制特性的基本层厚范围,从<0.1到≳10 &mgr;m。各个层已经合成,以显示≊15 MGOe的高&连字符;静态&连字符;能量乘积值。交替层分别表现出 5 和 15 kOe 左右的矫顽力,因此对于施加在 10 kOe 附近的反向场,交替层的平面内磁化强度指向相反的方向,将净磁化强度降低到接近零。在不改变溅射目标或衬底位置的情况下,通过溅射工艺控制和交替层的结晶方法调制Sm含量,实现了磁性调制。对于这种调制层膜,在没有外部场的情况下,系统磁能密度是平面饱和后施加的反向&连字符;场值的函数。

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  • 来源
    《journal of applied physics》 |1991年第8期|6064-6066|共页
  • 作者

    K. Chen; H. Hegde; F. J. Cadieu;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
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