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Magnetic properties and microstructures of CoNiCr and CoFeCr thin films

机译:CoNiCr和CoFeCr薄膜的磁性与微观结构

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The large difference in coercivities between CoNiCr (800 Oe) and CoFeCr (200 Oe) thin films, which were deposited on Cr‐coated NiP/Al substrates under the same conditions, is related to their differences in microstructures. The magnetic properties were measured with a vibrating sample magnetometer and the microstructures were studied by transmission electron microscopy. It is found that both the CoNiCr and the CoFeCr films are hcp in phase, and of similar grain sizes. However, the stacking fault density (fcc region) is higher in CoNiCr films than in CoFeCr films, which may account for the difference in their coercivities. The presence of stacking faults is related to composition effects on stacking fault energy and their generation to release residual stresses.
机译:在相同条件下沉积在Cr‐涂层NiP/Al衬底上的CoNiCr(800 Oe)和CoFeCr(200 Oe)薄膜之间的矫顽力差异很大,这与它们在微观结构上的差异有关。用振动样品磁力计测量磁性,并通过透射电子显微镜研究微观结构。结果表明,CoNiCr和CoFeCr薄膜的相位均为hcp,晶粒尺寸相似。然而,CoNiCr薄膜的堆积断层密度(fcc区域)高于CoFeCr薄膜,这可能是其矫顽力差异的原因。堆叠断层的存在与堆叠断层能量的组成效应及其释放残余应力的产生有关。

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