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Theory of potential‐well formation in an electrostatic confinement device

机译:静电约束装置中的电位连字符;井形成理论

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摘要

A theoretical model is developed to describe the behavior of an ion‐injection electrostatic confinement device. It is assumed that there is a shallow potential well in the center. Distribution functions, which are consistent with atomic processes occurring and with mechanisms leading to particle angular momentum, are obtained for ions and electrons. Using these distribution functions, Poisson's equation is solved to obtain potential and density profiles. By varying the experimental parameters, the conditions needed to go from a shallow potential well to a deep potential well are studied. The most important problems are found to be nonspherical focusing through grid construction asymmetry, and neutralization by electrons. Deeper wells are produced by increasing ion perveance, improving spherical symmetry, and reducing pressure.
机译:建立了一个理论模型来描述离子&连字符;注入静电约束装置的行为。假设中心有一个浅势井。对于离子和电子,获得了与发生的原子过程和导致粒子角动量的机制一致的分布函数。使用这些分布函数,求解泊松方程以获得势和密度分布。通过改变实验参数,研究了从浅势井到深势井所需的条件。最重要的问题是通过网格构建的非球面聚焦、不对称和电子的中和。通过增加离子渗透、改善球对称性和降低压力来产生更深的孔。

著录项

  • 来源
    《journal of applied physics》 |1974年第6期|2502-2511|共页
  • 作者

    W. M. Black; E. H. Klevans;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

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