Temperature Dependence Of Oriented Growth Of Pbyb_(1/2)nb_(1/2)o_3-pbtio_3 Thin Films Deposited On Lno/si Substrates

摘要

(1 -x)PbYb_(1/2)Nb_(1/2)O_3-xPbTiO_3 (PYbN-PT, x=0.5) (001) oriented thin films were deposited onto LaNiO3 (LNO)/Si (001) substrates by sol-gel processing. The crystallographic texture of the films was controlled by the annealing temperature and heating rate. Highly (001) oriented LNO thin films were prepared by a simple metal organic decomposition technique, and the samples were annealed at 700 ℃ and 750 ℃ using a rapid thermal annealing process and furnace, respectively. X-ray diffraction analysis revealed that the films of PYbN-PT were highly (001) oriented along LNO/Si substrates. The degree of PYbN-PT orientation is dependent on the heating rate and annealing temperature. Annealing heating rate of 10 ℃/s and high annealing temperature near 750 ℃ produce the greatest degree of (001) orientation, which gives rise to improved dielectric properties.