Deep levels in Sihyphen;implanted and thermally annealed semihyphen;insulating GaAs:Cr

摘要

Deep levels in semihyphen;insulating GaAs:Cr have been detected and characterized before and after Si implantation and thermal annealing. The measurement techniques used were current transients, photoinduced current transients, capacitance transients, and photocapacitance transients. Hole emission from the Cr centers with activation energy Dgr;ET= 0.85plusmn;0.01 eV was recorded in the semihyphen;insulating substrates as well as in the implanted layers. An electron trap level with Dgr;ET= 0.52plusmn;0.01 eV and a hole trap with Dgr;ET= 0.15plusmn;0.01 eV have been consistently observed in the implanted and annealed GaAs. The capture cross section of these traps and other traps detected in unimplanted and implanted GaAs:Cr have been determined.