Interfacehyphen;state effects in irradiated MOS structures

摘要

The effect that ionizing radiation has on Sihyphen;SiO2MOS devices is to create trapped holes and interface states at the Sihyphen;SiO2interface. Several recent publications claim that it is possible to distinguish donor or acceptor interface states by analyzingChyphen;Vcurves. It is shown here that in the presence of interface states it is not possible, in general, to determine either interfacehyphen;state type or the quantity of fixed oxide charge fromChyphen;Vmeasurements. Furthermore, observed differences between flatband voltage shifts onphyphen; andnhyphen;type MOS devices are shown to be independent of whether interface states are donors or acceptors.