Ionhyphen;implanted galliumhyphen;phosphide layers have been examined by ellipsometry. This technique provides a nondestructive means of measuring radiation damage. The index of refraction increases with ion dose except when ionhyphen;beamhyphen;radiation annealing causes a decrease in the extinction coefficient. A marked difference is observed in radiationhyphen;damage annealing between light and heavy ions. A computer calculation was performed to investigate the variation in the complex index of refraction due to implantedhyphen;ion fluence; agreement with experimental data was obtained.
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