The interface characteristics of five different heterostructures grown by metalorganic chemical vapor deposition (MOCVD) have been studied using secondary ion mass spectroscopy (SIMS) and highhyphen;resolution transmission electron microscopy (TEM). Two allhyphen;binary AlAshyphen;GaAs superlattices, ternary Al0.6Ga0.4Ashyphen;GaAs and GaAs0.95P0.05hyphen;GaAs superlattices and a mismatched GaAs0.8P0.2hyphen;GaAs single interface have been examined for compositional transients and interface abruptness. When an interrupted growth process (15 s pause between layers) is used in an atmospheric pressure MOCVD reactor system, no evidence of compositional transients is observed in analysis of SIMS data interfaces of heterostructures grown in this manner and examined with highhyphen;resolution TEM and corresponding lattice imaging are found to be abrupt within a single atomic layer.
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