The upper critical field of rf‐sputtered WNxand MoNxfilms

摘要

The upper critical field and other electronic properties, such as resistivity, temperature coefficient of resistance, and the Hall constant of rf‐sputtered WNxand MoNxfilms were measured. It was observed that the upper critical field is independent of the nitrogen partial pressure, whereas the resistivity is strongly affected. The structure and diffraction patterns of these films were also investigated by transmission electron microscopy (TEM). Our measured results are interpreted in terms of the influence of microscopic regions, which affect differently the normal and superconducting properties, as is found for NbNxfilms.