Electric field effects on HgTehyphen;based quantum wells

摘要

The electronic states localized in CdTe/HgTe/CdTe quantum wells (QWs) in the presence of an electric field perpendicular to the layers of the QW are investigated theoretically. It is noted that at wavelengths close to the energy gap of the QW the optical properties of the structure change considerably when the field is applied. Such QWs may therefore have potential applications in electrohyphen;optical devices at wavelengths beyond 2 mgr;m.