The temperature dependence of polycrystalline Si bulk and surface conductivity

摘要

The temperature dependence of polycrystalline Si conductivity is studied. The conductivity is analyzed in terms of activation energyEaand a prefactor sgr;0. The correlation betweenEaand sgr;0is shown to be consistent with the assumption of a linear relation between the grain boundary potential barrier height and the temperature. Field effect is used to measure surface conductivity, which is shown to have similar properties.