Specific contact resistance for alloyed Au‐Zn contacts onp‐type GaxIn1−xPyAs1−y

摘要

The specific contact resistance for a pulse plated and alloyed Au‐Zn (16 at.  Zn) contact onp‐type Ga0.28In0.72P0.39As0.61was found to be 3.60.4×10−5OHgr; cm2. Results of Rutherford backscattering measurements with 1.8‐MeV4He+showed that the alloyed Au moved only ∼1500 A˚ into the quaternary layer, while In and GaAs were displaced to the surface.