Near band‐gap photoluminescence from sulfur‐doped silicon samples

摘要

Photoluminescence measurements in sulfur‐doped silicon samples reveal new luminescence lines at 1.1439 eV (S1), 1.1150 eV (S2), and 1.0858 eV (S1TO). S1TOis the transverse optical (TO) phonon replica of the S1 line. The sharp luminescence lines result from the recombination of excitons bound to two different centers. The S1 line was found to have a thermal ionization energy of 12.0 meV, which corresponds directly to the spectroscopically determined binding energy of the bound exciton. A correlation of the binding centers with the sulfur donor levels is suggested.