InGaAsP doublehyphen;heterostructure optical waveguides withp+hyphen;njunction and their electroabsorption

摘要

InGaAsP threehyphen;dimensional optical waveguides withp+hyphen;njunctions are described. Ap+hyphen;InGaAsP/nhyphen;InGaAsP/n+hyphen;InGaAsP doublehyphen;heterostructure ribhyphen;type waveguide, which is suitable for monolithic integrations, was fabricated on ann+hyphen;InP substrate by liquidhyphen;phase epitaxial growth and chemical etching. Transmission loss as low as agr;=1.2 cmminus;1was observed for deephyphen;etched ribhyphen;structure passive waveguides at lgr;=1.318 mgr;m TE fundamental mode. Additionally, electroabsorption of the waveguide layer material, In0.78Ga0.22As0.48P0.52, was determined atEgminus;planck;ohgr;=0.09 eV. This measured electroabsorption will be a good guide for designing InGaAsP electrohyphen;optic and/or electroabsorptionhyphen;type modulators.