The structure-formation process andthermoelectric properties of binary and Fe-doped Ir_xSi_(1-x)(0.30<=x<= 0.41) thin films were investigated. The films wereprepared by means of physical vapor deposition techniques, inparticular by magnetron co-sputtering and electron beam co-evaporation. The amount of Fe dopant varied between 0 and 5 at.percent. The phase-formation process depends on the volumefractions of the major components Th and Si, whereas the smallconcentrations of dopant did not change the sequence of thecrystalline phases formed. On the other hand, the thermoelectrictransport properties correlate strongly with both the structure-formation process and the chemical composition of the films.Fe-doped iridium silicide films with useful thermoelectric powerfactors were successfully obtained by both magnetron co-sputtering and electron beam co-evaporation. A maximumthermoelectric power factor of 8.5 #mu#W/(K~2 cm) at 1200 Kwas observed for evaporated layers with the chemicalcomposition Ir_(0.35)Si_(0.63)Fe_(0.02).
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