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Criteria for physical domains in laboratory and solid‐state plasmas

机译:实验室和固态等离子体中的物理域标准

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摘要

Physical domains relevant to laboratory and solid‐state plasmas are described in terms of relevant characteristic parameters. Strongly‐ and weakly‐coupled classical plasmas are divided according to the plasma parameter Ggr;, whereas quantum and classical domains are separated according to the thermal DeBroglie wavelength Lgr;, nondimensionalized through mean interparticle spacing. These parameters are found to obey the relation Lgr;2=(pgr;/16)1/3(kBT/R*)Ggr;4/3, whereTis temperature and the Rydberg constantR* includes the dielectric constant of the medium and effective mass of charge carriers. The weakly‐coupled degenerate plasma is described in terms of the quantum compression parameterrs, which represents interparticle spacing measured in Bohr radii. An alternative description of this domain is given in terms of a new quantum parameter (labeled Ggr;Q) whose definition includes the Thomas–Fermi screening length in place of the Debye length in the classical plasma parameter. A graphical display in terms of appropriately nondimensionalized particle number density and temperature, respectively, reveals that all nonrelativistic, nonmagnetic plasma domains are included over the unit area of this graph. Application of these findings is made to GaAs and InP at 300 and 1000 °K in the intrinsic domain. Incorporating recent empirical expressions for effective mass, energy gap, and Fermi energy, it is found that at the lower temperature, the conducting solid‐state plasmas of these semiconductors are weakly coupled and classical. At the higher temperature, due primarily to increased carrier concentration, the plasmas grow degenerate.
机译:根据相关特性参数描述了与实验室和固态等离子体相关的物理域。强&连字符;和弱&连字符;耦合的经典等离子体根据等离子体参数&Ggr;进行划分,而量子域和经典域根据热德布罗意波长&Lgr;进行分离,通过平均粒子间距进行无量纲化。发现这些参数服从关系式 &Lgr;2=(&pgr;/16)1/3(kBT/R*)&Ggr;4/3,其中 Tis 温度和里德堡常数R* 包括介质介电常数和电荷载流子的有效质量。弱&连字符;耦合简并等离子体用量子压缩参数来描述,量子压缩参数表示以玻尔半径测量的粒子间距。该域的另一种描述是用一个新的量子参数(标记为 &Ggr;Q)给出的,其定义包括托马斯-费米筛选长度,而不是经典等离子体参数中的德拜长度。分别以适当的无量纲化粒子数密度和温度的图形显示显示,所有非相对论、非磁性等离子体域都包含在该图的单位面积上。这些发现应用于本征域中300和1000 °K的GaAs和InP。结合最近关于有效质量、能隙和费米能量的经验表达式,发现在较低的温度下,这些半导体的导电固态等离子体是弱耦合和经典的。在较高温度下,主要是由于载流子浓度的增加,等离子体生长退化。

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  • 来源
    《journal of applied physics》 |1984年第9期|2530-2535|共页
  • 作者

    Richard L. Liboff;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
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