Submonolayer type-II ZnS/ZnTe multiple quantum well

摘要

Submonolayer type-II ZnS/ZnTe multi-quantum well was grown using the hot wall epitaxy method with fast-movable substrate configuration. An atomic force microscope image of uncapped 0.5 ML ZnS epilayer showed the formation of two-dimensional ZnS islands with relatively small aspect ratio. X-ray diffraction measurements of thick ZnS and ZnTe epilayers confirmed that they are epitaxially grown. Photoluminescence measurements demonstrated that the recombination energies of ZnS and ZnTe epilayers were 3.77 eV and 2.35 eV, respectively. The photoluminescence spectrum of ZnS/ZnTe multi-quantum well demonstrated that the transitions of type-II ZnS/ZnTe quantum well and submonolayer ZnS well layer were observed at 2.15 and 3.73 eV, respectively. (c) 2006 Elsevier Ltd. All rights reserved.