A series of charge compensation investigations on SrS:Cu grown by physical vapor phase are reported. In this study, the trivalent ion, Y, was codoped during SrS growth to substitute on the Sr-site. Although similar Fl, performance to high temperature annealed sputtered samples was obtained using an annealing temperature of 650 degrees C, our results indicated that the thermal quenching in this material could only be reduced by charge compensation codoping. Preliminary results show that at 300 K the brightness of SrS:Cu, Y was only 15 less than at 10 K. From temperature dependent FL, and high resolution PLE, the physical properties of the defect and the defect reduction mechanisms are determined. (C) 2000 Elsevier Science B.V. All rights reserved. References: 10
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机译：报道了一系列关于物理气相生长的SrS：Cu的电荷补偿研究。在这项研究中，三价离子 Y 在 SrS 生长过程中被共掺杂以取代 Sr 位点。虽然在650°C的退火温度下获得了与高温退火溅射样品相似的Fl性能，但我们的结果表明，这种材料中的热淬灭只能通过电荷补偿共掺杂来降低。初步结果表明，在300 K时，SrS：Cu，Y的亮度仅比10 K时低15%。通过温度变化的FL和高分辨率PLE，确定了缺陷的物理性质和缺陷减少机理。（C） 2000 Elsevier Science B.V.保留所有权利。[参考资料： 10]
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