Structural, optical and electrical properties of Sc-doped ZnO films grown by RF magnetron sputtering at room temperature were investigated. The deposition pressure was varied from 0.3 to 2.0 Pa. XRD spectra indicated that the (1 0 0) peak of the film decreased as the deposition pressure decreased and the (1 1 0) peak showed the highest intensity at the pressure of 0.3 Pa. Compared with (1 0 0) and (1 1 0) peaks, the intensity of (0 0 2) peak was relatively weak. The morphology of the films is related to the deposition pressure. The stress in the film was investigated. The film with resistivity as low as 7.7×10 ~(-2) Ω cm has been obtained at 0.8 Pa. The average transmittance of these films was about 90 in the wavelength range 400800 nm, but decreased in the short wavelength region due to light scattering.
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