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Type-III Dirac fermions in HfxZr1-xTe2 topological semimetal candidate

机译:HfxZr1-xTe2拓扑半金属候选物中的III型狄拉克费米子

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摘要

Topological semimetals host interesting new types of low-energy quasiparticles such as type-I and type-II Dirac and Weyl fermions. Type-III topological semimetals can emerge exactly at the border between type-I and II, characterized by a line-like Fermi surface and a flat energy dispersion near the topological band crossing. Here, we theoretically predict that 1T-HfTe2 and 1T-ZrTe2 transition metal dichalcogenides are type-I and type-II DSMs, respectively. By alloying the two materials, a new HfxZr1-xTe2 alloy with type-III Dirac cone emerges at x=0.2, in combination with 1 in-plane compressive strain. By imaging the electronic energy bands with in situ angle-resolved photoemission spectroscopy of this random alloy with the desired composition, grown by molecular beam epitaxy on InAs(111) substrates, we provide experimental evidence that the t omicron p of type-III Dirac cone lies at-or very close to-the Fermi level.
机译:拓扑半金属承载着有趣的新型低能准粒子,如I型和II型狄拉克和外尔费米子。III型拓扑半金属可以恰好出现在I型和II型之间的边界处,其特征是线状费米面和拓扑带交叉附近的平坦能量色散。在这里,我们从理论上预测 1T-HfTe2 和 1T-ZrTe2 过渡金属硫族化合物分别是 I 型和 II 型 DSM。通过对这两种材料进行合金化,在x=0.2时出现了具有III型狄拉克锥的新型HfxZr1-xTe2合金,并结合了1%的面内压缩应变。通过在InAs(111)衬底上通过分子束外延生长的这种具有所需成分的随机合金的原位角度分辨光发射光谱对电子能带进行成像,我们提供了III型狄拉克锥体的t omicron p位于或非常接近费米能级的实验证据。

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