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Exploring the (Very Flat) Potential Energy Landscape of R-Br center dot center dot center dot pi Interactions with Accurate CCSD(T) and SAPT Techniques

机译:探索R-Br中心点中心点中心点圆周率的(非常平坦)势能景观 与精确CCSD(T)和SAPT技术的相互作用

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摘要

Halogen bonds involving an aromatic moiety as an acceptor, otherwise known as R-X center dot center dot center dot pi interactions, have increasingly been recognized as being important in materials and in protein-ligand complexes. These types of interactions have been the subject of many recent investigations, but little is known about the ways in which the strengths of R-X center dot center dot center dot pi interactions vary as a function of the relative geometries of the interacting pairs. Here we use the accurate CCSD(T) and SAPT2+3 delta MP2 methods to investigate the potential energy landscapes for systems of HBr, HCCBr, and NCBr complexed with benzene. It is found that only the separation between the complexed molecules have a strong effect on interaction strength while other geometric parameters, such as tilting and shifting R-Br center dot center dot center dot pi donor relative to the benzene plane, affect these interactions only mildly. Importantly, it is found that the C-6v (T-shaped) configuration is not the global minimum for any of the dimers investigated.
机译:以芳香族部分为受体的卤素键,也称为 R-X 中心点中心点点 pi 相互作用,越来越被认为在材料和蛋白质-配体复合物中很重要。这些类型的相互作用一直是最近许多研究的主题,但对 R-X 中心点中心点中心点 pi 相互作用的强度随相互作用对的相对几何形状而变化的方式知之甚少。本文采用精确的CCSD(T)和SAPT2+3 delta MP2方法研究了HBr、HCCBr和NCBr与苯络合体系的势能分布。结果发现,只有络合分子之间的分离对相互作用强度有很强的影响,而其他几何参数,如相对于苯平面的倾斜和移动R-Br中心点中心点中心点pi供体,对这些相互作用的影响很小。重要的是,发现C-6v(T形)构型不是所研究的任何二聚体的全局最小值。

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