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Hydrogen spillover phenomenon: Enhanced reversible hydrogen adsorption/desorption at Ta_2O_5-coated Pt electrode in acidic media

机译:氢溢出现象:酸性介质中Ta_2O_5涂层Pt电极上可逆的氢吸附/解吸增强

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摘要

The current study is concerned with the preparation and characterization of tantalum oxide-loaded Pt (TaOx/Pt) electrodes for hydrogen spillover application. XPS, SEM, EDX and XRD techniques are used to characterize the TaO_x/Pt surfaces. TaO_x/Pt electrodes were prepared by galvanostatic electrodeposition of Ta on Pt from LiF-NaF (60:40 mol%) molten salts containing K_2TaF_7 (20wt%) at 800℃ and then by annealing in air at various temperatures (200, 400 and 600℃). The thus-fabricated TaO_x/Pt electrodes were compared with the non-annealed Ta/Pt and the unmodified Pt electrodes for the hydrogen adsorption/desorption (H_(ads)/H_(des)) reaction. The oxidation of Ta to the stoichiometric oxide (Ta_2O_5) increases with increasing the annealing temperature as revealed from XPS and X-ray diffraction (XRD) measurements. The higher the annealing temperature the larger is the enhancement in the H_(ads)/H_(des) reaction at TaO_x/Pt electrode. The extraordinary increase in the hydrogen adsorption/desorption at the electrode annealed at 600℃ is explained on the basis of a hydrogen spillover-reverse spillover mechanism. The hydrogen adsorption at the TaO_x/Pt electrode is a diffusion-controlled process.
机译:当前的研究涉及用于氢溢出应用的负载氧化钽的Pt(TaOx / Pt)电极的制备和表征。 XPS,SEM,EDX和XRD技术用于表征TaO_x / Pt表面。 TaO_x / Pt电极的制备方法是:在800℃下,用LiF-NaF(60:40 mol%)含K_2TaF_7(20wt%)的LiF-NaF(60:40 mol%)熔融盐对Ta进行恒流电沉积,然后在不同温度(200、400和600)的空气中退火制备℃)。将如此制造的TaO_x / Pt电极与未退火的Ta / Pt和未改性的Pt电极进行氢吸附/解吸(H_(ads)/ H_(des))反应进行比较。从XPS和X射线衍射(XRD)测量可以看出,Ta氧化成化学计量的氧化物(Ta_2O_5)随退火温度的升高而增加。退火温度越高,TaO_x / Pt电极上H_(ads)/ H_(des)反应的增强越大。基于氢溢出-反向溢出机制,解释了在600℃退火的电极上氢的吸附/解吸异常增加。 TaO_x / Pt电极上的氢吸附是扩散控制的过程。

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