A Nonlinear Q-Switching Impedance Technique for Picosecond Pulse Radiation in Silicon

摘要

This paper presents a nonlinear Q-switching impedance (NLQSI) technique for picosecond pulse radiation in silicon. A prototype chip is designed with four NLQSI-based impulse generation channels, which can produce picosecond pulses with a reconfigurable amplitude. An on-chip impulse-coupling scheme combines the outputs from four channels and delivers the combined signal to an on-chip antenna. In addition, an asynchronous optical-sampling measurement system is used to characterize the radiated picosecond pulses in the time domain. The prototype chip can radiate 4-ps pulses with an SNR > 1 bandwidth of 161 GHz. Furthermore, pulse amplitude modulation is experimentally demonstrated. The prototype chip is fabricated in a 130-nm SiGe BiCMOS process technology with a die area of 1 mm(2).