...
首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Digital RF Transmitter With Single-Bit Delta Sigma M-Driven Switched-Capacitor RF DAC and Embedded Band Filter in 28-nm FD-SOI
【24h】

Digital RF Transmitter With Single-Bit Delta Sigma M-Driven Switched-Capacitor RF DAC and Embedded Band Filter in 28-nm FD-SOI

机译:数字射频发射器,采用 28nm FD-SOI 封装,具有单比特 Delta Sigma M 驱动的开关电容 RF DAC 和嵌入式带滤波器

获取原文
获取原文并翻译 | 示例

摘要

This paper presents a single-bit RF transmitter based on single-bit switched-capacitor RF digital-to-analog converters (DACs) embedded in an finite-impulse response (FIR) filter (FIR-DACs). The transmitter system comprises a single-bit quadrature delta-sigma modulator (Delta Sigma M), a digital mixer, and a 109-tap RF FIR-DAC stage with a single external inductor, combining D-A conversion with discrete- and continuous-time filtering. The on-chip part of the FIR-DAC is built exclusively with CMOS inverters and metal-oxide-metal capacitors, which are implemented in the interconnect layers to propose a compact fully digital solution, suitable for advanced CMOS nodes. A method for canceling redundant switching in the FIR-DAC is proposed to reduce its complexity and power consumption. Combining discrete- and continuous-time filtering, the out-of-band quantization noise of the 1-bit RF signal is strongly attenuated below the level required by emission masks. The RF FIR-DAC prototype is implemented in a 28-nm FD-SOI CMOS technology with ten metal layers and occupies a total active area of only 0.047 mm(2). The overall power consumption is 38 mW at 4.6-dBm peak output power, 900-MHz carrier frequency, and 1-V supply. FD-SOI body bias V-t tuning is used to effectively correct mixing clock duty-cycle errors in order to perform precise high-frequency I/Q interleaving, which enables high image and local oscillator rejections. The resulting power consumption, surface, and performance of the measured prototype make the proposed circuits and concepts particularly appropriate for use in emerging Internet of Things (IoT) applications.
机译:本文介绍了一种基于嵌入有限脉冲响应 (FIR) 滤波器 (FIR-DAC) 中的单位开关电容射频数模转换器 (DAC) 的单位射频发射器。发射器系统包括一个单位正交 Δ-Σ 调制器 (Delta Sigma M)、一个数字混频器和一个带有单个外部电感器的 109 抽头 RF FIR-DAC 级,将 D-A 转换与离散和连续时间滤波相结合。FIR-DAC的片上部分仅采用CMOS反相器和金属氧化物金属电容器构建,这些电容器在互连层中实现,以提供适用于高级CMOS节点的紧凑型全数字解决方案。该文提出一种消除FIR-DAC冗余开关的方法,以降低其复杂性和功耗。结合离散时间和连续时间滤波,1位RF信号的带外量化噪声在低于发射模板要求的水平时被强烈衰减。RF FIR-DAC原型采用28纳米FD-SOI CMOS技术,具有10个金属层,总有效面积仅为0.047 mm(2)。在 4.6dBm 峰值输出功率、900MHz 载波频率和 1V 电源下,总功耗为 38mW。FD-SOI体偏置V-t调谐用于有效校正混频时钟占空比误差,以执行精确的高频I/Q交织,从而实现高镜像和本振抑制。所测原型的功耗、表面和性能使所提出的电路和概念特别适合用于新兴的物联网 (IoT) 应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号