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首页> 外文期刊>Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films >Effects of growth parameters on the selective area growth of carbon nanotubes
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Effects of growth parameters on the selective area growth of carbon nanotubes

机译:生长参数对碳纳米管选择性面积生长的影响

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Effects of growth parameters such as plasma intensity, flow rate, composition of reactant gases. growth temperature, and hole size on the selective area growth (SAG) of carbon nanotubes (CNTs) were investigated using the triode type field emission array structure in plasma enhanced chemical vapor deposition (PECVD) system. As the plasma intensity was increased, the diameter of CNTs was reduced from 180 to 90 nm, but the growth rate was promoted. With an increase in the NH3 flow rate, the average diameter of CNTs was decreased due to the enhanced etching effect by NH3. An increase in the total flow rate of reactant gases reduced the growth rate of CNTs, but the average diameter of CNTs remained nearly constant. An increase in growth rate and diameter was observed at higher growth temperatures. As the hole size of the triode structure increased, the growth rate of CNTs gradually decreased because of the reduced lateral diffusion of reactant species into the hole. (C) 2002 Elsevier Science B.V. All rights reserved. References: 11
机译:生长参数的影响,如等离子体强度、流速、反应气体的组成。采用三极管型场发射阵列结构研究了等离子体增强化学气相沉积(PECVD)系统中碳纳米管(CNTs)选择性区域生长(SAG)的生长温度和空穴大小.随着等离子体强度的增加,CNTs的直径从180 nm减小到90 nm,但生长速率得到提高。随着NH3流速的增加,由于NH3增强的蚀刻效应,CNTs的平均直径减小。反应气体总流速的增加降低了碳纳米管的生长速率,但碳纳米管的平均直径几乎保持不变。在较高的生长温度下观察到生长速率和直径的增加。随着三极管结构空穴尺寸的增加,由于反应物物质向空穴的横向扩散减少,CNTs的生长速率逐渐降低。(C) 2002 Elsevier Science B.V.保留所有权利。[参考文献: 11]

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