Performance analysis of N+-CdTe/n(0)-Hg0.824675Cd0.175325 Te/p(+)-Hg0.824675Cd0.175325Te n - i - p photodetector operating at 30 mu m wavelength for terahertz applications

摘要

In this paper, the performance of a N+-CdTe/n(0)-Hg0.824675Cd0.175325Te/p(+)-Hg-0.824675 Cd0.175325Te n-i-p photodetector with a heavily doped CdTe material as a window for terahertz frequency application has been analyzed. The detector is designed and studied in respect of electrical and optical characteristics. The results obtained with the help of TCAD tool are compared with the results obtained on the basis of the analytical model. The proposed photodetector is suitable for operation at a wavelength of 30 mu m at liquid nitrogen temperature (77 K). It has the characteristics of dark current of 4.6 x 10(-9) A, quantum efficiency (eta) similar to 73.93, responsivity ( R) similar to 17.9 A/W, specific detectivity (D*) similar to 1.44 x 10(9) mHz(1/2) W-1, noise equivalent power (NEP) similar to 0.3 x 10(-16) W.