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首页> 外文期刊>Electrical Design News: The Magazine of the Electronics Industry >Hitting their stride: Nonvolatile-memory upstarts draw near to established leaders
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Hitting their stride: Nonvolatile-memory upstarts draw near to established leaders

机译:大踏步前进:非易失性存储器新贵向老牌领导者靠拢

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摘要

ONE NEXT GENERATION TECHNOLOGY IS FINALLY ON A LEADING-EDGE PROCESS, ANOTHER IS NEARING PRODUCTION AFTER YEARS OF DEVELOPMENT, AND A THIRD HAS ITS FIRST HIGH-VOLUME CUSTOMER. THE NONVOLATILE-MEMORY RACE HAS, FOR THE FIRST TIME IN A LONG TIME, BECOME COMPETITIVE AGAIN. IT'S BEEN MORE THAN 15 YEARS Since fast-random-access NOR flash memory's initial I public unveiling by Intel in 1988. NOR quickly gobbled up all of the memory sockets that EPROM had previously serviced, despite that EPROM technology was more than a decade and a half more mature (Figure 1). Nowadays, NOR flash memory is big business; Semico analyst Jim Handy estimates this year's revenue at USD13.362 billion.
机译:一项下一代技术终于进入了前沿工艺,另一项技术经过多年的开发即将投入生产,第三项技术有了第一个大批量客户。很长一段时间以来,非易失性存储器竞赛首次再次变得竞争激烈。自 1988 年英特尔首次公开推出快速随机存取 NOR 闪存以来,已经过去了 15 年多。尽管EPROM技术已经成熟了十五年以上,但NOR迅速吞噬了EPROM以前使用的所有内存插槽(图1)。如今,NOR闪存是一门大生意;Semico分析师Jim Handy估计今年的收入为133.62亿美元。

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