Electronic properties of type-II GaAs1-xSbx/GaAs quantum rings for applications in intermediate band solar cells

摘要

We present a theoretical analysis of the electronic properties of type-II GaAs1-xSbx/GaAs quantum rings (QRs), from the perspective of applications in intermediate band solar cells (IBSCs). We outline the analytical solution of Schrodinger's equation for a cylindrical QR of infinite potential depth, and describe the evolution of the QR ground state with QR morphology. Having used this analytical model to elucidate general aspects of the electronic properties of QRs, we undertake multi-band k.p calculations-including strain and piezoelectric effects-for realistic GaAs1-xSbx/GaAs QRs. Our k.p calculations confirm that the large type-II band offsets in GaAs1-xSbx/GaAs QRs provide strong confinement of holes, and further indicate the presence of resonant (quasi-bound) electron states which localise in the centre of the QR. From the perspective of IBSC design the calculated electronic properties demonstrate several benefits, including (i) large hole ionisation energies, mitigating thermionic emission from the intermediate band, and (ii) electron-hole spatial overlaps exceeding those in conventional GaAs1-xSbx/GaAs QDs, with the potential to engineer these overlaps via the QR morphology so as to manage the trade-off between optical absorption and radiative recombination. Overall, our analysis highlights the flexibility offered by the QR geometry from the perspective of band structure engineering, and identifies specific combinations of QR alloy composition and morphology which offer optimised sub-band gap energies for QR-based IBSCs.