Heat capacity of the n-InSe single crystal layered semiconductor

摘要

Measurements of heat capacity and conductivity of InSe single crystal have been carried out over the temperature range 5-300 K. Heat capacity C_(p), entropy ΔS, and enthalpy ΔH as well as Debye temperatures have been calculated. The singularities observed on the temperature dependencies of heat capacity and electric conductivity can be attributed to a phase transition to the charge density wave state. This transition perturbs considerably the electron and phonon spectra of the studied layered crystal.