Characterization of lateral semiconductor nanostructures by means of x-ray grazing-incidence diffraction

摘要

Free-standing wire arrays prepared by holographic exposure and wet chemical deep etching on a vertically arranged GaAs/GaInAs/GaAs001 single quantum well structure were characterized by x-ray grazing incidence diffraction using synchrotron radiation. Using a grazing angle of a↓(i) ≈0.05° the diffracted intensity stems primarily from the surface grating. It's periodicity (D ≈480 nm) was determined close to the (-220) and (220) Bragg reflection being parallel and perpendicular to the orientation of wires, respectively. The average wire width ( 21.6±1.5) nm and (96.6±1.5) nm. respectively and the coherence length of the grating (ξ≈2 μam) were obtained via Fourier transformation of the (220) shape function. # 1997 American Institute of Physics. S0003-6951 (96)04845-0