Self-organized superlattice formation in II-IV and III-V semiconductors

摘要

There is extensive recent experimental evidence of spontaneous superlattice (SL) formation in various Ⅱ-VI and -V semiconductors. Here we propose an atomistic mechanism responsible for SL formation, and derive a relation predicting the temperature, flux, and miscut dependence of the SL layer thickness. Moreover, the model explains the existence of a critical miscut angle below which no SL is formed, in agreement with results on ZnSeTe, and predicts the formation of a platelet structure for deposition onto high symmetry surfaces, similar to that observed in InAsSb. # 1997 American Institute of Physics. S0003-6951 (97)03806-0