Bandfilling in metalorganic chemical vapor deposited AlxGa1minus;xAshyphen;GaAshyphen;AlxGa1minus;xAs quantumhyphen;well heterostructure lasers

摘要

Data are presented showing that quantumhyphen;well (Lzsim;200 Aring;) AlxGa1minus;xAshyphen;GaAshyphen;AlxGa1minus;xAs heterostructures, grown by metalorganic chemical vapor deposition, can be operated as lasers on confinedhyphen;particle transitions over an unusually large range (Dgr;lgr;gsim;1000 Aring;). The bandfilling properties of these quantumhyphen;well heterostructures, which can easily be excited to carrier densities as high asngsim;1019/cm3, are described. Quantumhyphen;well laser diodes (xsim;0.5) are described that operate (300 K) from the Ggr; band edge to wavelengths as short as 7700 Aring; (Dgr;Esim;185 meV). Narrow photopumped samples (15ndash;30 mgr;m) are shown to operate (77 K) as lasers on clearly defined confinedhyphen;particle transitions from the band edge to 6980 Aring; (Dgr;Esim;270 meV). On samples from another wafer, laser operation has been observed to 6885 Aring; (Dgr;Eequiv;hngr;minus;Eg=293 meV). The photoluminescence spectra of these heterostructures extend well into the region of the recently determinedLband minima of GaAs.