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首页> 外文期刊>journal of applied physics >Electrichyphen;fieldhyphen;induced absorption effect in LPEhyphen;grown InGaAsP/InP multihyphen;quantumhyphen;well waveguides
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Electrichyphen;fieldhyphen;induced absorption effect in LPEhyphen;grown InGaAsP/InP multihyphen;quantumhyphen;well waveguides

机译:Electrichyphen;fieldhyphen;induced absorption effect in LPEhyphen;grown InGaAsP/InP multihyphen;quantumhyphen;well waveguides

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摘要

Multihyphen;quantumhyphen;well (MQW) striphyphen;loaded waveguides, which are composed of liquidhyphen;phasehyphen;epitaxyhyphen;grown InGaAsP/InP systems, have been characterized in detail. Several MQW waveguides with well depths (Lz) ranging from 100 to 240 Aring; have been compared with bulk ones about the electrichyphen;fieldhyphen;induced absorption effect, considering the zerohyphen;bias propagation loss and the optical confinement factor in the region in which absorption occurs. It has been confirmed that the MQW (Lzsim;100 Aring;) waveguides have an absorption change under the electric field more than five times larger than the bulk ones with the same zerohyphen;bias propagation loss.

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