We report the growth and structural properties of InP, InAs/InP strained single quantum wells and shorthyphen;period InAs/InP strained layer superlattices by atomic layer epitaxy. A selfhyphen;limiting growth close to 1 monolayer/cycle has been obtained for InP and for InAs with low substrate temperatures between 350 and 360thinsp;deg;C. The samples were grown on InP (001) substrates and characterized by high resolution xhyphen;ray diffraction, grazinghyphen;incidence xhyphen;ray reflectometry, and Raman spectroscopy. The interference of xhyphen;ray wave fields in the grown structures observed by both types of xhyphen;ray measurements can be used to measure nondestructively the thickness of the deposited films with relatively high precision. High resolution xhyphen;ray diffraction and grazinghyphen;incidence xhyphen;ray reflectometry of the InAs/InP superlattices confirm the periodicity of the structures in agreement with theoretical predictions. Raman spectroscopy shows doublets of folded acoustic modes as well as InAshyphen;like and InPhyphen;like confined longitudinal optical phonons in the InAs/InP superlattices. Results indicate that, despite the 3.2percnt; lattice mismatch, atomic layer epitaxy is a powerful method for fabricating highly strained structures with atomically controlled heterointerfaces.
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