Mode behavior of photopumped AlGaAs-GaAs lasers confined by oxide-semiconductor distributed Bragg reflectors

摘要

Data are presented on photopumped AlGaAs-GaAs quantum-well (QW) heterostructure lasers with oxide-semiconductor distributed Bragg reflector (DBR) vertical confinement (and Fabry-Perot cleaved edges) that reduces the mode volume and influences the edge emission (EE) spectra. For narrow samples (approx.<20 μm), with the vertical DBRs "tuned" below the QW recombination transitions (E_(1) lowest, E_(2) higher), single mode EE operation occurs on E_(2) at a wavelength ～77 meV above the lowest QW energy. For wide samples with an oxide-semiconductor vertical DBR located in a narrow band at the sample cleave edges, the DBR region acts as a spacial and spectral filter, thus increasing the possibility of single-mode EE operation.