Activation and diffusion studies of ion-implanted p and n dopants in germanium

摘要

We have demonstrated symmetrically high levels of electrical activation of both p- and n-type dopants in germanium. Rapid thermal annealing of various commonly implanted dopant species were performed in the temperature range of 600-850℃ in germanium substrates. Diffusion studies were also carried out by using different anneal times and temperatures. T-SUPREM~(TM) simulations were used to fit the experimental profiles and to extract the diffusion coefficient of various dopants.