SiO diffusion during thermal decomposition of SiO2

摘要

Chemically prepared thin oxide films were decomposed in an ultrahigh vacuum at temperatures of between 760 and 850thinsp;deg;C. By measuring the remaining oxide thickness as a function of time we could extract the diffusion coefficient of SiO in SiO2. This was determined to beD(cm2/s)=1.48times;10minus;3exp(minus;3.2 eV/kT). The results are discussed in respect to an appropriate heat cleaning of wafers in a Sihyphen;molecularhyphen;beam epitaxial system.