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High Figure of Merit in Nanostructured n-Type KPb_mSbTe_(m+2) Thermoelectric Materials

机译:纳米结构n型KPb_mSbTe_(m+2)热电材料的高品质因数

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摘要

We demonstrate that the KPb_mSbTe_(2+m) system (PLAT-m for tellurium, antimony, lead potassium, m = 19-21) of materials exhibits high thermoelectric performance. Samples with compositions K_(1-x)Pb_(m+δ)Sb_(1+γ)Te_(m+2) were prepared using several combinations of x, δ, γ and m and their thermoelectric properties were investigated in the temperature range of 300 - 800 K. All K_(1-x)Pb_(m+δ))Sb_(1+γ)Te_(m+2) samples exhibited n-type conduction over the measured temperature range. Their lattice thermal conductivities were found to be significantly reduced when compared to PbTe and even AgPb_mSbTe_(m+2). For example, for K_(0.95)Pb_(20)Sb_(1.2)Te_(22) a lattice thermal conductivity as low as 0.4 W/(m · K) was estimated at 650 K (based on a Lorenz number of 1.25 x 10~(-8) W · Ω/K~2). High resolution transmission electron microscopy on several samples revealed a widely dispersed nanoscale particle with varying size and shape endotaxially embedded inside a PbTe-rich matrix which is believed to be responsible for the reduced lattice thermal conductivity of K_(1-x)Pb_(m+δ)Sb_(1+γ)Te_(m+2) materials. Because of their small size, the nanoinclusions are coherent with the matrix and therefore do not markedly degrade the electrical conductivity of the materials. As a result, very high figures of merit are achieved at high temperature for several compositions. For K_(0.95)Pb_(20)Sb_(1.2)Te_(22), a maximum figure of merit ZT ~1.6 was obtained around 750 K. This value is similar to that of n-type LAST-18 and is two times larger than that of the-state-of-the-art n-type PbTe.
机译:我们证明了材料的KPb_mSbTe_(2+m)体系(PLAT-m用于碲,锑,铅钾,m = 19-21)表现出较高的热电性能。采用x、δ、γ和m的几种组合制备了成分为K_(1-x)Pb_(m+δ)Sb_(1+γ)Te_(m+2)的样品,并在300 - 800 K的温度范围内研究了它们的热电性能。所有K_(1-x)Pb_(m+δ))Sb_(1+γ)Te_(m+2)样品在测量温度范围内均表现出n型传导。与PbTe甚至AgPb_mSbTe_(m+2)相比,它们的晶格热导率显著降低。例如,对于K_(0.95)Pb_(20)Sb_(1.2)Te_(22)晶格导热系数低至0.4 W/(m ·K)估计为650 K(基于1.25 x 10~(-8)W·Ω/K~2的洛伦兹数)。对几个样品的高分辨率透射电子显微镜揭示了一种广泛分散的纳米级颗粒,其大小和形状各不相同,嵌入富含 PbTe 的基质中,这被认为是导致 K_(1-x)Pb_(m+δ)Sb_(1+γ)Te_(m+2) 材料晶格导热系数降低的原因。由于它们的尺寸小,纳米夹杂物与基质相干,因此不会显着降低材料的导电性。因此,在高温下,几种组合物的品质因数非常高。对于K_(0.95)Pb_(20)Sb_(1.2)Te_(22),在750 K左右获得了最大品质因数ZT ~1.6。该值与n型LAST-18相似,是最先进的n型PbTe的两倍。

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