Temperature dependence of photoluminescence spectra of the pentanary alloy semiconductor (AlxGa1−x)1−zInzPyAs1−y

摘要

Photoluminescence spectra of the pentanary alloy semiconductor (AlxGa1−x)1−zInzPyAs1−y(x<0.33,y<0.18,z<0.09) are observed at various temperatures between 300 and 13 K. The spectrum at higher temperatures is of a single peak, in which the line shape is well reproduced by an expression ofC(E−Eg)1/2 exp−(E−Eg)/kBT, whereEis the photon energy,Egthe band gap,kBBoltzmann constant, andTtemperature. At lower temperatures, a band on the lower energy side grows up rapidly. The plot of integrated luminescence intensity of a high‐energy peak as a function of reciprocal temperature shows a single exponential slope. The temperature dependence of the peak energy of the high‐energy band is of a hyperbolic cotangent form. These experimental results suggest that the peak on the higher‐energy side is attributed to a band‐to‐band transition.