GaAs singlehyphen;crystals wafers are implanted at room temperature with 400hyphen;keV Te+ions to a dose of 1times;1015cmminus;2to form an amorphous surface layer. The recrystallization of this layer is investigated by backscattering spectrometry and transmission electron microscopy after transient annealing byQhyphen;switched ruby laser irradiation. An energy density threshold of about 1.0 J/cm2exists above which the layer regrows epitaxially. Below the threshold the layer is polycrystalline; the grain size increases as the energy density approaches threshold. The results are analogous to those reported for the elemental semiconductors, Si and Ge. The threshold value observed is in good agreement with that predicted by the simple model successfully applied previously to Si and Ge.
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