Fabrication of nanostructures in strained InGaAs/GaAs quantum wells by focusedhyphen;ionhyphen;beam implantation

摘要

Lowhyphen;temperature photoluminescence (PL) spectroscopy was used to estimate the compositional disordering induced by Ga focusedhyphen;ionhyphen;beam implantation in a series of strained InGaAs/GaAs quantum wells (QW). A simple formalism was derived to estimate the indium concentration and the degree of interdiffusion of the QWs from the observed shifts in PL transition energies. A study of nanostructures indicated that the lateral extent of compositional disordering was significantly larger than predicted from the lateral spreading of the ion beam.