Defect concentrations in AlxGa1−xSb which is in equilibrium with a liquid phase are calculated. When the liquid phase is Ga rich, a Ga antisite (Ga2−Sb) or an Al antisite (Al2−Sb) is dominant, and the concentrations of vacancies are much smaller than the antisite concentrations. Ga2−Sbis dominant in GaSb equilibrated with a Sb‐rich solution, but the concentration of Sb antisites comes close to that of Ga2−Sbas temperature is lowered. Forxlarger than 0.6, a group‐III vacancy is the predominant defect in the case of Sb‐rich solutions. Calculated net acceptor concentrations agree well with those determined experimentally. A complex defect composed of GaSband a Ga vacancy, which have been taken as the dominant residual acceptor, is expected to be negligible.
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机译：计算了与液相平衡的AlxGa1−xSb中的缺陷浓度。当液相富含Ga时，Ga反位点（Ga2−Sb）或Al反位点（Al2-Sb）占主导地位，空位浓度远小于反位点浓度。GaSb中占主导地位的Ga2−Sbis与富含Sb&连字符的溶液平衡，但Sb反位点的浓度接近Ga2−Sbas的浓度，温度降低。Forx大于 0.6，则 group‐III 空位是 Sb‐rich 解中的主要缺陷。计算出的净受体浓度与实验测定的浓度非常吻合。由GaSband a Ga空位组成的复杂缺陷，已被视为主要的残余受体，预计可以忽略不计。
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