Calculated spectral dependence of gain in excited GaAs

摘要

The calculated dependence of the gain coefficient on photon energy and excitation level in GaAs is given for 297 and 77 K. The curves of gain versus excitation rate generally have downward curvature for photon energies near the gain peak, while the envelope of these curves generally has upward curvature except at high excitation rates. Results are also given for the calculated dependence of the radiative recombination rate coefficient and of the photon energy at the gain peak on excitation rate. The qualitative behavior of the results is in agreement with experiment.