Effect of Coulomb scattering innhyphen;type silicon inversion layers

摘要

Experimental results of surface mobility (effective mobility) innhyphen;channel metalhyphen;oxidehyphen;semiconductor fieldhyphen;effect transistors subjected to high electric field stress are presented. The electron mobility limited by Coulomb scattering is extracted from the experimental data comparing the measured effective mobility before and after the stress. The lowhyphen;temperature data (T=77 K) are discussed in terms of the Sternndash;Howard twohyphen;dimensional Coulomb scattering theory in the electric quantum limit approximation.