Effects of irradiationhyphen;induced lattice defects on the quantum Hall effect in GaAshyphen;AlxGa1minus;xAs heterostructures

摘要

GaAshyphen;AlxGa1minus;xAs heterostructures were irradiated with 6hyphen;MeV protons at low temperature to study systematically the influence of lattice disorder in twohyphen;dimensional electron systems on resistivity, mobility, carrier concentrationn, and quantum Hallhyphen;effect structures. The additional irradiationhyphen;induced scattering centers lead to a linear decrease ofnwith the proton fluence and to a broadening of the quantum Hall plateaus, which is qualitatively explained in the framework of localization in magnetic fields.