Coupled-stripe quantum-well-assisted AlGaAs-GaAs-InGaAs-InAs quantum-dot laser

摘要

Data are presented on the coupled-stripe laser operation (continuous wave, 300 K) of a single InAs quantum-dot (QD) layer coupled via a thin (5 A) GaAs barrier to an auxiliary strained InGaAs quantum well (QW) grown (confined) in an AlGaAs-GaAs heterostructure. Because of strain-induced (QW strain) improvement of the QD growth and QD alignment along diagonal (reflecting) ridges, the InGaAs-QW+InAs-QD crystals exhibit high gain along and across laser stripes, which is advantageous for coupled-stripe laser operation. A twin-stripe single-QD-layer QW+QD laser (4 μm stripes on 6 μm centers) of usual cleaved length, 50 mW.